 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2SK1666 Silicon N-Channel MOS FET Application High speed power switching Features * * * * Low on-resistance High speed switching Low drive current Low voltage drive device Can be driven from 4 V * Suitable for motor drive, solenoid drive , DC-DC converter and etc. Outline TO-3PFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK1666 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW 10 s, duty cycle 1% 2. Value at TC = 25C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 60 20 45 180 45 60 150 -55 to +150 Unit V V A A A W C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS 60 20 -- -- 1.0 -- -- Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 20 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.016 0.022 32 3950 1920 360 30 180 630 290 1.3 140 Max -- -- 10 250 2.5 0.02 0.035 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns I F = 45 A, VGS = 0 I F = 45 A, VGS = 0, diF/dt = 50 A/s I D = 20 A, VGS = 10 V, RL = 1.5 Test conditions I D = 10 mA, VGS = 0 I G = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 50 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 20 A, VGS = 10 V *1 I D = 20 A, VGS = 4 V *1 I D = 20 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance VGS(off) RDS(on) 2SK1666 Maximum Safe Operation Area Power vs. Temperature Derating 60 Channel Dissipation Pch (W) Drain Current ID (A) 500 300 100 30 10 Ta = 25C 3 1 0 50 100 150 0.5 0.1 D C 10 PW O pe 10 = 1 10 m s m s s 0 s 40 ra tio (1 n sh 20 (T ot ) C = Operation in this area is limited by RDS (on) 25 C ) Case Temperature TC (C) 0.3 3 30 1 10 100 Drain to Source Voltage VDS (V) Typical Output Characteristics 100 10 V 80 Drain Current ID (A) 8V Pulse Test Drain Current ID (A) 4.5 V 60 4V 40 3.5 V 20 VGS = 3 V 50 5V 40 Typical Transfer Characteristics VDS = 10 V Pulse Test 30 20 75C 25C TC = -25C 10 0 2 4 6 8 Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 10 0 1 2 3 4 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current 5 Drain to Source Saturation Voltage VDS (on) (V) Static Drain to Source on State Resistance RDS (on) () 2.0 Pulse Test 1.6 0.5 Pulse Test 0.2 0.1 0.05 1.2 VGS = 4 V VGS = 10 V 0.8 30 A 0.4 20 A ID = 10 A 0 2 4 6 8 Gate to Source Voltage VGS (V) 10 0.02 0.01 0.005 2 5 10 20 50 100 Drain Current ID (A) 200 2SK1666 Static Drain to Source on State Resistance vs. Temperature Static Drain to Source on State Resistance RDS (on) () Forward Transfer Admittance yfs (S) 0.1 Pulse Test 100 Ta = -25C 50 Forward Transfer Admittance vs. Drain Current 0.08 0.06 ID = 30 A 0.04 VGS = 4 V 0.02 VGS = 10 V 0 -40 20 A 10 A 30 A 10 A, 20 A 160 20 10 5 2 1 0.5 Pulse Test VDS = 10 V 75C 25C 40 0 80 120 Case Temperature TC (C) Body-Drain Diode Reverse Recovery Time 1 2 5 10 20 Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage 50 500 Reverse Recovery Time trr (ns) di/dt = 50 A/s VGS = 0, Ta = 25C Capacitance C (pF) 1,000 Ciss Coss 100 200 100 50 20 10 5 2 Crss 10 VGS = 0 f = 1 MHz 1 50 100 200 10 5 20 Reverse Drain Current IDR (A) 0 10 20 30 40 50 Drain to Source Voltage VDS (V) Dynamic Input Characteristics 100 Drain to Source Voltage VDS (V) ID = 35 A 20 Gate to Source Voltage VGS (V) Switching Characteristics 1,000 500 Switching Time t (ns) tf 200 100 50 td (on) 20 10 0.5 . VGS = 10 V, VDD = 30 V . PW = 2 s, duty 1% 1 10 2 5 20 Drain Current ID (A) 50 tr td (off) 80 16 60 VDS 40 VDD = 10 V 25 V 10 V 20 VDD = 50 V 25 V 10 V 40 80 120 160 Gate Charge Qg (nc) 12 8 4 0 0 200 2SK1666 Reverse Drain Current vs. Source to Drain Voltage 100 Reverse Drain Current IDR (A) Pulse Test 80 60 VGS = 10 V 40 0, -5 V 20 4V 0 0.8 2.0 0.4 1.2 1.6 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance S (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 0.5 0.3 0.1 0.2 0.1 0.05 0.03 0.02 0.01 1 sh o 1.0 TC = 25C ch-c (t) = S (t) * ch-c ch-c = 2.08C/W, TC = 25C PDM lse t pu T 1m 10 m Pulse Width PW (s) 100 m PW 1 D = PW T 0.01 10 100 10 2SK1666 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207 Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Strae 3 D-85622 Feldkirchen Munchen Tel: 089-9 91 80-0 Fax: 089-9 29 30 00 Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071 |
Price & Availability of 2SK1666
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |